Power MOSFET with a Deep Source Contact

ABSTRACT

A power MOSFET IC device including an array of MOSFET cells formed in a semiconductor substrate. The array of MOSFET cells comprises an interior region of interior MOSFET cells and an outer edge region of peripheral MOSFET cells, each interior MOSFET cell of the interior region of the array comprising a pair of interior MOSFET devices coupled to each other at a common drain contact. In an example embodiment, each interior MOSFET device includes a source contact (SCT) trench extended into a substrate contact region of the semiconductor substrate. The SCT trench is provided with a length less than a linear portion of a polysilicon gate of the interior MOSFET device, wherein the SCT trench is aligned to the polysilicon gate having a curvilinear layout geometry.

FIELD OF THE DISCLOSURE

This disclosure relates generally to the field of semiconductor devicesand the methods of fabrication thereof, and more particularly, withoutlimitation, to a power MOSFET device and its fabrication.

BACKGROUND

A power MOSFET is a specific type of metal oxide semiconductorfield-effect transistor designed to handle significant power levels(e.g., typically involving switching of more than 1A). Power MOSFETs arewell known for superior switching speed, and are used in manyapplications such as power supplies, DC-to-DC converters, low-voltagemotor controllers, as well as switches in other high-frequency pulsewidth modulation (PWM) applications, and the like.

Efficiency and power loss in microelectronic devices including powerMOSFETs present some trade-offs in power electronics applications.Engineers are continually challenged to increase power density and atthe same time reduce the amount of power dissipated in the applications.The reduced power dissipation helps keep the device temperatures undercertain specifications, which has given rise to a constant demand forbetter operational efficiencies in power MOSFET applications. Forexample, traditional approaches to improve efficiency in DC/DCsynchronous buck converters include reducing conduction losses in theMOSFETs through designing lower on-state resistance (R_(DSON)) devicesand lowering switching losses through reducing device capacitances.However, current technologies to achieve incremental improvements inR_(DSON) are at a point of diminishing returns because of the trade-offrequired between the device's breakdown voltage and its on-stateresistance. This is because the breakdown voltage of the device directlyimpacts the resistive contribution.

As the advances in the design of integrated circuits and semiconductorfabrication continue to take place, improvements in semiconductordevices, including power MOSFETs, are also being concomitantly pursued.

SUMMARY

The following presents a simplified summary in order to provide a basicunderstanding of one or more aspects of the present disclosure. Thissummary is not an extensive overview of the disclosure, and is neitherintended to identify key or critical elements of the disclosure, nor todelineate the scope thereof. Rather, the primary purpose of the summaryis to present some concepts of the disclosure in a simplified form as aprelude to a more detailed description that is presented later.

In one aspect, an embodiment of an IC, e.g., a power MOSFET IC, and itsfabrication is disclosed which overcomes several challenges that may beencountered in processing deep source contact (SCT) trench featuresrequired in an IC fabrication flow by utilizing one or more innovativeSCT layout design enhancements. Example IC comprises, inter alia, asemiconductor substrate having a top surface and a bottom surface; andat least one MOSFET cell formed in the semiconductor substrate. TheMOSFET cell comprises a pair of MOSFET devices coupled to each other ata common drain contact, wherein at least one MOSFET device includes anSCT trench extended into a substrate contact region in the semiconductorsubstrate proximate to the bottom surface. The SCT trench is providedwith a length along the top surface less than a linear portion of apolysilicon gate of the at least one MOSFET device, wherein the SCTtrench is aligned to a complementary contour of the polysilicon gatehaving a curvilinear layout geometry (e.g., self-aligned source).

In another aspect, an embodiment of a laterally diffusedmetal-oxide-semiconductor transistor (LDMOS) device is disclosed thatcomprises, inter alia, a semiconductor substrate having a top surfaceand a bottom surface, the semiconductor substrate having a doped layerpositioned adjacent to the top surface and having an upper surface;source and drain regions of a first conductivity type formed in thedoped layer proximate the upper surface of the doped layer, the sourceand drain regions being spaced from one another and separated by achannel region of a second conductivity type formed in the doped layer,the channel region having a portion extending under the source region,wherein the drain region comprises a doped drain (e.g., LDD) regionformed adjacent to the channel region; a doped drain contact regionspaced from the channel region by the lightly doped drain region; aconductive gate having an upper surface and sidewall surfaces, theconductive gate formed over a gate dielectric layer formed over thechannel region, the conductive gate at least partially overlapping thesource and drain regions; and a conducting path connecting the sourceregion and the doped substrate via a conductor disposed in an SCT trenchformed in the doped layer and extended into a substrate contact regionin the semiconductor substrate. The SCT trench has a length, e.g.,defined along the upper surface of the doped layer or the top surface ofthe semiconductor substrate, that is less than a linear portion of theconductive gate, the SCT trench aligned to the conductive gate formed ashaving a curvilinear geometry. A first insulating layer is formed overthe upper surface and sidewall surfaces of the conductive gate. A fieldplate is provided over the lightly doped drain region and at least aportion of the first insulating layer, wherein the field plate isconnected to the source. A second insulating layer is formed over thefield plate layer, first insulating layer and the trench; and a drainelectrode electrically coupled to the drain contact region.

In a still further aspect, a method of fabricating a power MOSFETintegrated circuit such as the LDMOS device set forth above isdisclosed, which involves restricting SCT trench features to linearportions of polysilicon gates. In another embodiment, an edge cell of anarray of power MOSFET cells (also referred to as a terminating cell) isfabricated to include an inactive portion wherein the SCT trench andassociated source region are not formed, thereby specifically obtaininga non-functional portion in the edge cell. In yet another embodimentinvolving edge cells with inactive portions, a ground tab may beprovided at the die edge in order to ensure that a die edge field plateassociated with the inactive portion is at a stable potential duringdevice operation. In a still further related embodiment involving edgecells with inactive portions, the edge cell may have feature geometriesthat are different from those of other cells of the MOSFET cell array(e.g., interior cells or non-terminating cells).

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure are illustrated by way of example,and not by way of limitation, in the Figures of the accompanyingdrawings in which like references indicate similar elements. It shouldbe noted that different references to “an” or “one” embodiment in thisdisclosure are not necessarily to the same embodiment, and suchreferences may mean at least one. Further, when a particular feature,structure, or characteristic is described in connection with anembodiment, it is submitted that it is within the knowledge of oneskilled in the art to effect such feature, structure, or characteristicin connection with other embodiments whether or not explicitlydescribed.

The accompanying drawings are incorporated into and form a part of thespecification to illustrate one or more exemplary embodiments of thepresent disclosure. Various advantages and features of the disclosurewill be understood from the following Detailed Description taken inconnection with the appended claims and with reference to the attacheddrawing Figures in which:

FIG. 1 depicts a cross-sectional view of a portion of an example powerMOSFET integrated circuit or device according to an embodiment of thepresent disclosure;

FIG. 2 is a flowchart associated with a method of fabricating a powerMOSFET integrated circuit according to an embodiment of the presentdisclosure;

FIGS. 3A-3C depict layout diagrams of example power MOSFET cellsaccording to one or more embodiments of the present disclosure;

FIG. 4A depicts a cross-sectional view of an interior power MOSFET celllayout shown in FIG. 3A according to an example embodiment of thepresent disclosure; and

FIG. 4B depicts a cross-sectional view of a peripheral power MOSFET celllayout shown in FIG. 3B according to an example embodiment of thepresent disclosure.

DETAILED DESCRIPTION OF THE DRAWINGS

The present disclosure is described with reference to the attachedFigures wherein like reference numerals are generally utilized to referto like elements throughout. The Figures are not drawn to scale and theyare provided merely to illustrate the disclosure. Several aspects of thedisclosure are described below with reference to example applicationsfor illustration. It should be understood that numerous specificdetails, relationships, and methods are set forth to provide anunderstanding of the disclosure. One skilled in the relevant art,however, will readily recognize that the disclosure can be practicedwithout one or more of the specific details or with other methods. Inother instances, well-known structures or operations are not shown indetail to avoid obscuring the disclosure. The present disclosure is notlimited by the illustrated ordering of acts or events, as some acts mayoccur in different orders and/or concurrently with other acts or events.Furthermore, not all illustrated acts or events are required toimplement a methodology in accordance with the present disclosure.

In the following description, reference may be made to the accompanyingdrawings wherein certain directional terminology, such as, e.g.,“upper”, “lower”, “top”, “bottom”, “left-hand”, “right-hand”, “frontside”, “backside”, “vertical”, “horizontal”, etc., may be used withreference to the orientation of the Figures or illustrative elementsthereof being described. Since components of embodiments can bepositioned in a number of different orientations, the directionalterminology is used for purposes of illustration and is in no waylimiting. Likewise, references to features referred to as “first”,“second”, etc., are not indicative of any specific order, importance,and the like, and such references may be interchanged mutatis mutandis,depending on the context, implementation, etc. It is understood thatfurther embodiments may be utilized and structural or logical changesmay be made without departing from the scope of the present disclosure.The features of the various exemplary embodiments described herein maybe combined with each other unless specifically noted otherwise.

As employed in this specification, the terms “coupled”, “electricallycoupled”, “connected” or “electrically connected” are not meant to meanthat elements must be directly coupled or connected together.Intervening elements may be provided between the “coupled”,“electrically coupled”, “connected” or “electrically connected”elements.

Example semiconductor devices described below may include or formed of asemiconductor material like Si, SiC, SiGe, GaAs or an organicsemiconductor material. The semiconductor material may be embodied as asemiconductor wafer or a semiconductor chip containing one or more powerMOSFET integrated circuits, input/output and control circuitry, as wellas microprocessors, microcontrollers, and/or micro-electro-mechanicalcomponents or systems (MEMS), and etc. The semiconductor chip mayfurther include inorganic and/or organic materials that are notsemiconductors, for example, insulators such as dielectric layers,plastics or metals, and etc.

Referring now to the drawings and more particularly to FIG. 1, depictedtherein is a cross-sectional view of a portion of an example powerMOSFET device 100 according to an embodiment of the present disclosurewherein one or more layout design innovations may be implemented forovercoming certain issues relative to fabricating semiconductor deviceshaving high aspect ratio features such as deep source contact trenches.The power MOSFET device 100 may be implemented in an integrated circuit(IC) die. By way of illustration, example power MOSFET device 100 isshown as a planar gate power MOSFET device having a metal-filled deepsource contact (SCT) 120 that may be formed in a trench of asemiconductor substrate. In an example implementation, deep sourcecontact 120 may be formed as a metallic plug comprising a refractorymetal filler 122, which may include a platinum-group metal (PGM) thatconnects a source region 127 formed in a body 114 of a power MOSFET cellportion 110A and/or 110B to a substrate contact region 139. In oneexample embodiment, Tungsten may be used as a refractory metal filler122. One identifying feature of refractory metals is their respectiveresistance to heat, where the five industrial refractory metals(Molybdenum (Mo), Niobium (Nb), Rhenium (Re), Tantalum (Ta) and Tungsten(W)) all have melting points in excess of 2000° C., with Tungsten havinga melting point of 3422° C. Example PGMs include Iridium (Ir), Osmium(Os), Palladium (Pd), Platinum (Pt) and Rhodium (Rh), with Pt and Pdhave melting points of 1769° C. and 1554° C., respectively. The meltingpoints may be compared to Aluminum (Al) (not a refractory metal or aPGM) which has a melting point of only 660° C., which is thus not idealfor forming a metal filler for a disclosed metal filled deep SCT 120.

In one example embodiment, power MOSFET 100 includes a doped layer 108positioned near the top surface of the substrate 105. The doped layer108 may be developed as an epitaxial (epi) layer or formed by ionimplantation. As previously noted, the substrate 105 and/or doped layer108 can comprise silicon, silicon-germanium, or other semiconductormaterial. In certain additional or alternative embodiments, however,MOSFET 100 can be formed directly on a substrate 105, such as asubstrate comprising bulk silicon with an appropriate doping species andconcentration. In one implementation, the doped layer 108 is anepitaxial layer 108 that is lightly doped and has a layer thicknessdesigned to increase the device breakdown voltage, on a more heavilydoped substrate 105.

Accordingly, in an embodiment of the present disclosure, power MOSFET100 may be considered as a semiconductor structure having a dopedsubstrate, e.g., substrate 105, having bottom and top surfaces and adoped layer (e.g., epi 108) positioned adjacent to the top surface andhaving an upper surface, wherein source and drain regions of a firstconductivity type may be formed in the doped layer proximate the uppersurface of the doped layer, the source and drain regions being spacedfrom one another and separated by a channel region of a secondconductivity type formed in the doped layer, the channel region having aportion extending under the source region, and further wherein the drainregion formed in a doped region 129 adjacent to the channel regionformed in a body 114. In one example implementation, doped region 129comprises a lightly doped drain (LDD) having a concentration that islighter than a drain region 132.

In an example MOSFET IC 100, the drain region 132 may be provided with adrain contact (DCT) 130. The DCT 130 includes a metal plug 130A with abarrier metal liner 130B. In one implementation, the barrier metal liner130 includes titanium and/or titanium nitride (Ti/TiN). Laterallysurrounding a portion of the deep SCT 120, a source region 127 iscoupled to the deep SCT 120. The source region 127 is generally formedby ion implantation. The deep SCT 120 provides a low resistance contactto the source region 127 by virtue of the metal filler 122. The deep SCT120 connects the source 127 to the epi layer 108 or substrate 105 via ahighly doped substrate contact region 139 (doped p+ for P-typesubstrates) at a bottom of the deep SCT 120 (optionally through a thinregion of epi layer 108) so that during operation when the power MOSFET100 is turned ON, current can flow vertically down and out the back ofthe substrate 105 (i.e., semiconductor die) with low resistance (in anexample source-down implementation).

To the external circuitry, accordingly, the backside of the substrate105 is generally operative as the source pin. The topside metal (thatwill be on top of the dielectric layer(s) 138 and coupled to a draincontact through the dielectric layer 138 to the drain 132) is operativeas the drain pin. As noted above, at the bottom of the deep SCT 120 is asubstrate contact region 139 that is generally an implanted regionformed after the etching of the trench for the deep SCT 120, which maybe doped the same type as the epi layer 108. In an illustrativefabrication flow, the boron doping level for substrate contact region139 can be around 1×10²⁰ cm⁻³ (for example, 5×10¹⁹ cm⁻³ to 1×10²¹ cm⁻³)to provide a low resistance ohmic contact to the substrate 105.

Continuing to refer to FIG. 1, it should be appreciated that twoindividual power MOSFET devices 110A and 1108 are shown forming a cellthat can function as a building block of a power MOSFET device, eachdevice being defined from the midpoint of the deep SCT 120 to themidpoint of the DCT 130 in this example arrangement shown in FIG. 1.However, a skilled artisan will recognize that a practical power MOSFETdevice may be considered a 2D transistor array, as there may be hundredsor thousands of individual active MOSFET cells coupled togetherelectrically in parallel and an example cell may be defined from themidpoint of one SCT to the midpoint of the next SCT. Accordingly, a 2Dtransistor array to form an example power MOSFET device is generallybuilt up in circuit design by repetitive mirror images of a unit cellcomprising two devices 110A, 110B coupled to each other by a common SCTor a common DCT, depending on how a repeating cell is defined.

Individual power MOSFET devices 110A/110B also include respective gateelectrodes or gate stacks, e.g., gates 111A, 111B, formed over asuitable gate dielectric layer 112. Additionally or alternatively, anoptional silicide layer 113A/113B may be provided as part of the gatestack of a MOSFET device. Regardless of whether a multi-layer stackarrangement is implemented, an insulating layer (e.g., a firstinsulating layer 143 forming a spacer over the sidewall surfaces andextended over a top surface of the stack) may be provided as adielectric barrier. Further, the gate/stacks 111A/113A and 111B/113B ofthe MOSFETs 110A/110B are separately electrically tied together byanother metal or doped polycrystalline element (not shown in this FIG.),which may be generally connected to the gate electrode terminal of thedevice package. As the transistor cell array is generally built up byrepetitive mirror images of this unit cell, it will be appreciated thatone DCT 130 shares two gates on either side, just as one deep SCT 120shares two gates on either side, as shown in the example arrangement ofFIG. 1.

A source field plate 117 may be provided as an extension of the deep SCTstructure 120 to operate as a source metal wrapping or extensionadjacent to the respective gate electrodes of the power MOSFET devices110A/110B. In one example implementation, source field plate (FP) 117may comprise a refractory metal material layer or refractory metalmaterial layer stack, formed of materials such as, e.g., TiN/Ti,tungsten, Ti-tungsten (Ti—W), and etc. In some embodiments, therefractory metals may be provided in combination with polysilicon-basedmaterials or stacks. Additionally, such refractory metal materials mayalso be provided at the bottom of the deep SCT 120. In an examplefabrication flow, a rapid thermal anneal (RTA) step can be performedafter TiN/Ti deposition, which leads to titanium silicide formation atthe Ti/Si interface in an embodiment having for a silicon epi layer 108.This formation of metal silicide can also facilitate a good ohmiccontact between the deep SCT 120 and the epi layer 108 (or substrate105).

Still continuing to refer to the cross-sectional view of FIG. 1,fabrication of an example power MOSFET device 100 may include formingone or more dielectric layer(s) 138 above the gate stacks 111A/113A and111B/113B as well as surrounding and/or overlying FP 117. Typically,such dielectric layers 138 may comprise a dielectric stack formed of oneor more deposited silicon oxide layers (e.g., Tetraethyl Orthosilicate(TEOS) derived, boron and phosphorous doped TEOS (BPTEOS)/TEOS) layers),which may be based on standard interlevel dielectric processing(deposition/lithography/etching).

In one example implementation, a tilted implant step may also beprovided that facilitates tilted implant of appropriate species into thesidewall region of the SCT trench 120 to form a doped liner 136 prior tothe formation of the metal filler 122. One skilled in the art willrecognize that such a tilted implant may help reduce the resistancebetween the body region 114 (e.g., P-doped) and the substrate 105 or epilayer 108. The tilted trench implant utilizes a first conductivity type,e.g., p-type for power MOSFET device 100 that is exemplified as an NMOSdevice. Typically, the implant parameters for a tilted implant includingboron may comprise a dose range from 1×10¹⁴ to 5×10¹⁵ cm⁻², an energyrange from 20 keV to 60 keV, and an angle range from 5 to 25 degrees.

Skilled artisans will appreciate that disclosed MOSFETs have a form thatresembles an LDMOS (Laterally Diffused MOSFET) structure, which in someembodiments may be implemented as an asymmetric power MOSFET designedfor low on-resistance and high blocking voltage. As used herein, anLDMOS device may be deemed synonymous with a diffused metal oxidesemiconductor (DMOS) device. Besides Tungsten (W), the metal filler 122may also comprise other refractory metals such as Ta, or a PGM such asPt or Pd, their metal silicides, or metal alloys of such metalsincluding Ti—W.

Although NMOS transistors are generally described herein, it should beclear to one having ordinary skill in the art to use the disclosure ofthe present patent application to also form PMOS transistors, by n-dopedregions being substituted by p-doped regions and vice versa, withresulting structures being roughly analogous. For example, differencesin disclosed NMOS vs. PMOS power MOSFET devices may involve usingopposite types of doping, e.g., a P/P+ substrate for NMOS becomes anN/N+ substrate for PMOS, the source and drain regions being changed fromN-type doping for NMOS to P-type doping for PMOS, and the body regionbeing changed from P-type for NMOS to N-type for PMOS. Furthermore,whereas an N-channel MOSFET cell structure including a source-downenhancement mode transistor is exemplified in FIG. 1 for the individualpower MOSFET devices, one skilled in the art having reference to thispatent application will appreciate that P-channel devices and/ordrain-down architectures may also be utilized with appropriate polaritychanges in a power MOSFET implementation, mutatis mutandis, according tothe teachings herein.

One skilled in the art will recognize that the deep SCT structure 120 ofthe disclosed power MOSFET 100 is arranged to ohmically contact thesource region and the substrate of the device, which may be doped withopposite types of species relative to each other. Further, the metal(e.g., W) filled deep SCT is recognized to reduce the SCT parasiticresistance as well as the area-normalized ON state resistance (R_(SP))of the power FET. As noted elsewhere, the deep SCT trench structure 120generally has a high aspect ratio (AR), for example, having a 0.2-0.4 μmcritical dimension (CD) opening between gate stacks 111A/113A and111B/113B that provide self-alignment for the source, with a depth of1.0 μm (including the gate stack) or more. Accordingly, in someembodiments, the AR of the deep SCT 120 may be 5:1 or more. In someother embodiments, deep SCT 120 may have an opening of 0.4 μm and adepth of 1.2 μm (including the gate stack thickness), thereby resultingin an AR of 3:1. One skilled in the art will therefore recognize thatvarious other AR combinations may be obtained depending on semiconductorprocess and fabrication flows.

Providing trench ARs having ranges of interest (e.g., at least 2:1 to5:1 in certain embodiments) in an example fabrication flow is recognizedherein to result in significant challenges for a metal fill and etchprocess that may be used in fabricating deep SCT structures. Examplechallenges in fabricating deep SCT trenches with high AR values usingmetal fill and etch back processing may include formation of metalresidue or particulates over the field plate structures (e.g., FP 117).As one skilled in the art can appreciate, such metal residueparticulates can cause leakage or shorting between the source (as it isconnected to the FP) and the drain contact. Further, formation of metalseams (or, void regions) in the SCT can add to the parasitic resistance,thereby resulting in increased R_(SP). Additionally, SCT trenches withdeep recess requirements may not be opened properly or consistently dueto inherent process variations in the metal fill and etch backoperations across the die/wafer comprising the power MOSFET cell arrays.Still further, there is a cell asymmetry in the layout ofSCT/polysilicon gate at the edge of a power MOSFET array (i.e.,peripheral region of the cell array), which results in poor Ti/TiNcoverage at the Si corner in the subsequent FP deposition process. Suchissues have been recognized as not only causing a reduction in anexample process flow's robustness but also negatively impacting theyield due to parametric losses (e.g., losses due to l_(DSS) failures,wherein l_(DSS) is referred to as the drain current for zero bias for aFET).

An example power MOSFET process flow that may encounter some of theissues described above may be set forth herein as an illustrativesemiconductor process environment for purposes of providing a referenceprocess flow with respect to an embodiment of the present disclosure.For instance, a metal filler deposition/etch back process flow forplanar gate power MOSFET fabrication may commence with a semiconductorwafer comprising a P-epi layer on P+ bulk silicon substrate. A gateelectrode comprising WSi₂ as the silicide layer on polysilicon may beformed as the gate electrodes for a MOSFET cell of two adjacent MOSFETdevices (e.g., devices 110A and 100B described hereinabove). In oneimplementation, a gate dielectric comprising 175 Angstroms (Å) ofsilicon oxide (SiO₂) may be formed over the substrate. A trench about1.5 μm deep including a 0.5 μm tall gate stack, with a trench opening CDof about 0.3 μm may be formed, which may be lined with FP materialcomprising 800 Å of TiN on 600 Å of Ti. Whereas such a Ti/TiN layer maybe extended into the deep SCT to coat its sidewalls, the TiN/Ti materialby itself may not be sufficient to provide a low resistance path fromthe source 127 to the doped layer 108 or substrate 105. The deep SCT 120may be filled with a Tungsten (W) deposition (e.g., by way of a chemicalvapor deposition or CVD process). Subsequent tungsten etchback etchprocessing may comprise a 3-step plasma etch in an example process flowimplementation, with the process gas comprising SF₆/O₂/N₂, a pressure of30 mtorr to 35 mtorr, a plasma source power being 650 W-800 W, biaspower 25-35 W, with the temperature of the chamber wall being about 50°C. and the temperature of the electrostatic chuck (ESC) being about 30°C. In one example process flow, various etch parameters may be providedwith a tolerance of at least 10%. Additional details relating to metalfiller deposition/etch back process flow for fabricating power MOSFETsmay be found in the commonly assigned co-pending U.S. patent applicationSer. No. 15/171,136, dated ______, (Docket No. TI-76107), incorporatedby reference herein.

To overcome at least some of these issues, novel SCT layout designinnovations are set forth herein that may be practiced in variouscombinations, thereby giving rise to multiple embodiments. Broadly, inone aspect, the length of a SCT layout feature (e.g., a horizontaldimension along the top surface of the substrate) is restricted suchthat it does not extend beyond a poly gate curvature area, wherein theSCT is aligned to a complementary contour (i.e., a linear portion) ofthe poly gate. Accordingly, in this aspect, the actual SCT width in apower MOSFET device or cell is determined by the gate-to-gate space(including the spacer width where a gate spacer is provided), ratherthan the SCT layout dimension as required in an arrangement where theSCT layout extended beyond the poly gate curvature area. With thedisclosed approach of restricting an SCT layout feature to a linearportion of the poly gate feature, effects of non-uniformity inprocessing may be alleviated as will be described in further detailbelow. In another aspect, cell array edge asymmetry in poly/SCT layoutis removed so as to ensure that all SCT trenches are between two polygates, thereby ascertaining that all SCT Si corners (including thoseformed in the cells of the array periphery) will have the same profileand thus have a uniform Ti/TiN coverage. In yet another aspect, a groundtab may be provided at the die edge in order to ensure that the die edgefield plate is at a stable potential during device operation since thecell edge poly/SCT layout asymmetry may have been removed in anembodiment. These various aspects will be described in additional detailhereinbelow, recognizing that not all embodiments of the presentdisclosure require each and every design innovation aspect in practiceof the present disclosure.

FIG. 2 is a flowchart associated with a method 200 of fabricating apower MOSFET integrated circuit according to an embodiment of thepresent disclosure. At block 202, a semiconductor substrate having a topsurface and a bottom surface is provided, in which a doped layer havingappropriate species and concentration may be formed adjacent to the topsurface of the semiconductor surface and having an upper surface (block204). Source and drain regions of a first conductivity type positionedin the doped layer proximate the upper surface of the doped layer may beformed, the source and drain regions being spaced from one another andseparated by a channel region of a second conductivity type formed inthe doped layer (block 206). In one implementation, the channel regionmay be provided with a portion extending under the source region,wherein the drain region may comprise a portion formed in a suitablydoped region (e.g., a lightly doped drain (LDD) region) formed adjacentto the channel region. A doped drain contact region may be formed suchthat it is spaced from the channel region by the lightly doped drainregion (block 208). A conductive gate having an upper surface andsidewall surfaces may be formed over a gate dielectric layer formed onthe channel region, wherein the conductive gate may partially overlapthe source and drain regions (block 210). A conductive path is formedfor connecting the source region and the semiconductor substrate via aconductor disposed in an SCT trench formed in the doped layer andextended into a substrate contact region in the semiconductor substrate.The SCT trench is provided with a length, e.g., longer of the twodimensions along an upper surface of the doped layer (or, along the topsurface of the semiconductor substrate in an embodiment without thedoped layer), that is less than a linear portion of the conductive gateformed as having a curvilinear geometry (block 212). It should beappreciated that the length of the conductive gate's linear portionbeing referred to herein is the length of the layout featurecorresponding to the conductive gate in a top plan view rather than anelectrical “channel gate length,” commonly used in reference to across-section of a MOSFET device. A first insulating layer is formedover the upper surface and sidewall surfaces of the conductive gate(block 214), whereupon a field plate layer having suitable metallurgicalproperties is formed over the lightly doped drain region and at least aportion of the first insulating layer, wherein the field plate layer isconnected to the source region and SCT (block 216). A second insulatinglayer is formed over the layer of field plate, first insulating layer(e.g., not covered by the field plate layer) and the trench (block 218).A drain electrode electrically coupled to the drain contact region isformed to complete the power MOSFET integrated circuit fabrication(block 220).

FIGS. 3A-3C depict layout diagrams of example power MOSFET cells in topplan view according to one or more embodiments of the presentdisclosure. Reference numeral 300A in FIG. 3A refers to an interiorregion of an array of power MOSFET cells of an IC or die. Layout ofthree repeating cells 302-1, 302-2, 302-3 contiguously disposed in theinterior region is illustrated, which may be referred to as interiorcells, wherein each interior cell comprises two adjacent MOSFET devicesas described in detail hereinabove. By way of illustration in particularreference to cell 302-2, a common drain contact 314 is provided betweena pair of interior MOSFET devices (shown in detail in a cross-sectionalview of FIG. 4A), which are coupled to each other at the common draincontact 314. A polysilicon gate feature 312 is provided as a forkedstructure (e.g., as a closed-ended tuning fork or racetrack, etc.)having an extension 311, wherein two linear portions 310A, 310Bemanating from the extension 311 form the racetrack or a closed fork,which linear portions 310A/310B (referred to as “fingers” or “prongs” orterms of similar import), are operative as respective gates for the twoMOSFET devices of cell 302-2. Accordingly, it will be seen that anexample polysilicon gate feature 312 may comprise a curvilinear layoutgeometry formed of two substantially parallel linear portions 310A, 310Bthat are connected at each end with substantially semicircular orarcuate portions 308A, 308B, wherein extension 311 forms a connection toa polysilicon boundary or margin 313 of the MOSFET IC device thatincludes gate contacts 316.

In accordance with the teachings of the present patent application, asubstantially rectangular source contact (SCT) trench feature 304 havinga length 303 less than a linear portion of the polysilicon gate (e.g.,length portions or fingers 310A/310B) of the interior MOSFET device isprovided for defining a source contact conductor with respect to asource region 306, wherein the SCT trench 304 is self-aligned to thegate (i.e., the SCT trench is aligned to a complementary contour ordimension of the gate). As one skilled in the art will appreciate,because of the repeating pattern of MOSFET cells in an array, SCT trench304 and associated source region 306 are operative as a source terminalfor one of the MOSFET devices of the interior cell 302-2 and for acontiguous MOSFET device of the adjacent cell 302-3, similar to thecross-sectional arrangement shown in FIG. 1 described above in detail.Similar cross-sectional views are also illustrated in FIGS. 4A and 4B,which will be set forth hereinbelow.

In one arrangement, SCT trench 304 may be short of a particular distancefrom both end cap curved portions 308A, 308B of the example polysilicongate feature 312 (i.e., SCT trench's length is restricted or confined tothe linear portions of the gate feature by some distance), therebyensuring that the SCT trench feature does not extend beyond each end capcurved portion. In another arrangement, SCT trench 304 may be restrictedat one end but not the other. In a still further arrangement, SCT trench304 may be pulled back from respective end cap curved portions 308A,308B of the example polysilicon gate feature 312 by different distances(e.g., a terminus of SCT trench 304 may fall short of end cap curvedportion 308A by a distance that is different than the distance by whichthe opposite terminus of SCT trench 304 it is restricted relative to theother end cap curved portion 308B). One skilled in the art will readilyrecognize that several variations of SCT trench feature restrictionvis-à-vis end cap curved portions 308A, 308B of the example polysilicongate feature 312 may be obtained within the scope of the presentdisclosure. Regardless of the variations in SCT trench formation, an FPlayer 318 may be provided for covering over the polysilicon gatefeatures, SCT trench features as well as channel and doped regions ofthe various MOSFET cells 302-1 to 302-3 regions in a manner set forthpreviously.

Because the SCT trench feature 304 is restricted to the linear portions310A, 310B of the polysilicon gate feature 312, the actual cell area SCTwidth is determined by the gate-to-gate space (including any spacers)between two adjacent cells, e.g., cells 302-2 and 302-3, rather than bySCT trench layout dimensions that can extend out beyond the curvedportions in conventional process flows. As has been noted elsewhere inthe present patent application, such extended SCT trench features areprone to non-uniform processing across the die, causing various processdefects and concomitant yield reduction, particularly where high ARs aredesired for the SCT structures.

Turning to FIG. 3B, reference numeral 300B refers to an outer edge orperipheral region of a power MOSFET cell array, which may include aninterior region having interior cells described above. Preferably, theperipheral region includes a last MOSFET cell 350-2 next to a MOSFETcell 350-1 that is similar to the interior cells. Whereas MOSFET cell350-1 may have an identical cell structure as the interior cells 302-1to 302-3, edge MOSFET cell 350-2 (also synonymously referred to as aterminating cell, edge cell, or a peripheral cell, or terms of similarimport) may comprise one fully formed MOSFET device 354 disposedadjacent to an inactive circuit portion 352 (i.e., a partially formedportion) that contains no SCT trench formation or source region. Inother words, the inactive circuit portion 352 comprises a region devoidof a source terminal although a regular polysilicon gate portion 356 maybe provided as one branch of a forked polysilicon gate feature 358formed similar to the polysilicon gate features 312 of the interiorMOSFET cells. In addition, a shared drain contact 314 similar to thedrain contacts 314 of the interior MOSFET cells may also be disposedbetween the functional MOSFET device 354 and adjacent non-functionalportion 352 of the terminating cell 350-2. Likewise, a field plate layer318 may also be provided for the functional MOSFET device 354 andadjacent non-functional portion 352 of the terminating cell 350-2 in asimilar manner, which may be extended over to cover the polysiliconboundary 313.

It will be appreciated that by providing a terminating cell arrangementdifferent from the interior cells of a MOSFET IC device, it can beascertained that all SCT trench features are disposed between twopolysilicon gate features. Accordingly, it can ensured that allSCT/polysilicon corners have the same profile and same FP coverage(e.g., Ti/TiN coverage). As noted previously, such an arrangement canhelp ensure uniform processing across the device, thereby reducingprocess weaknesses that can be caused by non-self-aligned source contactside (e.g., such as voiding and thinning of barrier layer).

A further variation of an example peripheral region 300C of a MOSFET ICdevice is shown in FIG. 3C wherein a terminating cell 370-2 may havefeature geometries that are different from those of an adjacent cell370-1 which may be identical to interior cells such as, e.g., cells302-1 to 302-3. By way of illustration, terminating cell 370-2 isprovided as a cell that is shorter than its adjacent cell 370-1, withcorrespondingly shorter drain contact 380, shorter polysilicon gatefeature 382, as well as shorter SCT contact feature 376 and associatedsource region 377. Accordingly, a peripheral cell such as cell 370-2 mayinclude a MOSFET device 374 having a polysilicon gate of a second lengththat is less than the length of the polysilicon gate of the interiorMOSFET devices. Further, Similar to the terminating cell arrangement350-2 of peripheral region 300B illustrated in FIG. 3B, terminating cell370-2 may be provided with a non-functional circuit portion 372 adjacentto a functional MOSFET device 374 in the embodiment shown in FIG. 3C. Ina still further embodiment, SCT contact feature 376 may be restricted toa linear portion of the polysilicon gate feature 382, in a mannersimilar to the embodiment of FIG. 3A.

In a still further aspect, a ground tab may be provided in either of theembodiments of FIGS. 3B and 3C in order to ensure that the field plateat the die/device edge is at a stable potential during device operationsince the non-functional circuit portion 352 (in FIG. 3B) andnon-functional circuit portion 372 (in FIG. 3C) are devoid of sourcetrench formation and associated source region (which are maintained at aknown potential in interior cells, e.g., V_(SS), during deviceoperation). As an illustration, a ground tab 320 is shown as coupled tothe FP layer 318 in the embodiment of FIG. 3B. Likewise, a similarground tab arrangement may be provided in the embodiment of FIG. 3C. Itshould be apparent that the number, shape, size and location of groundtabs may be variable, depending on the requirements of a particularfabrication process.

FIG. 4A depicts a cross-sectional view 400A of interior power MOSFETcell layout shown in FIG. 3A taken along X-X′. Interior MOSFET cell 401Ais representative of cross-sectional views of cells 302-1 to 302-3 aswell as cells adjacent to terminating cells in certain embodiments. FIG.4B depicts a cross-sectional view 400B including aperipheral/terminating MOSFET cell 401B, taken along Y-Y′. It will beapparent to one skilled in the art that views 400A and 400B collectivelymay represent a cross-sectional view of a power MOSFET IC device or die,with an interior region or portion illustrated by view 400A and an edgeor peripheral portion illustrated by view 400B. In both views 400A,400B, a substrate 402 having a doped layer 404 (e.g., P-epitaxial layer)supports a doped region 406 as described previously in reference toFIG. 1. An N+ source 414 is formed in a P-type body 408 adjacent to SCT410 that is filled with a W plug 412. An N+ drain 416 defined in dopedregion 406 is contacted by a drain plug 422. A polysilicon gate 418overlapped by oxide insulation (not specifically labeled) is covered bya field plate 420. The entire cell array may be covered by a protectiveoxide layer such as TEOS 424, with the drain plugs being exposed forelectrical contacting. In the terminating cell 401B, a non-functionalcircuit portion 452 is exemplified by an inactive polysilicon “gate” 450that is overlain by a field plate 455 extending to and over a boundarypolysilicon region 456. As described previously, the non-functionalcircuit portion 452 is devoid of a source and associated SCT trenchrequired of a functional MOSFET device.

Below tables set forth illustrative yield enhancements obtained byimplementing innovative SCT design aspects described above:

TABLE 1 (Without Innovative SCT Design Features) LOT-ID Failure BinYield Loss LOT-1 I_(DSS) 5.40% LOT-2 I_(DSS) 6.90% LOT-3 I_(DSS) 17.04%

TABLE 2 (With Innovative SCT Design Features) LOT-ID Failure Bin YieldLoss LOT-A I_(DSS) 1.20% LOT-B I_(DSS) 1.33% LOT-C I_(DSS) 1.20%

One skilled in the art will appreciate that yield losses due to l_(DSS)parametric failures have significantly improved in the splits withwafers processed according to the SCT layout features as set forth inthe present patent disclosure.

Based on the foregoing description, skilled artisans will recognize thatembodiments disclosed herein advantageously provide various SCT layoutfeatures that facilitate uniform processing of silicon trenches wheregate stack topography is present in a MOSFET cell array. In oneimplementation, an embodiment of the present disclosure eliminatesfeatures in which the trench boundary is defined by a photoresist edgeonly (e.g., SCT extensions beyond the curved portions of a curvilinearpolysilicon gate structure). As all trenches are defined by aself-aligned gate or spacer oxide formed around the gates, betterprocess control may be achieved in power MOSFET process flows,especially those optimized for achieving a trade-off between thebreakdown voltage (BV_(DSS)) and specific on-state resistance (R_(SP))in a variety of power applications.

Although various embodiments have been shown and described in detail,the claims are not limited to any particular embodiment or example. Noneof the above Detailed Description should be read as implying that anyparticular component, element, step, act, or function is essential suchthat it must be included in the scope of the claims. Reference to anelement in the singular is not intended to mean “one and only one”unless explicitly so stated, but rather “one or more.” All structuraland functional equivalents to the elements of the above-describedembodiments that are known to those of ordinary skill in the art areexpressly incorporated herein by reference and are intended to beencompassed by the present claims. Accordingly, those skilled in the artwill recognize that the exemplary embodiments described herein can bepracticed with various modifications and alterations within the spiritand scope of the claims appended below.

What is claimed is:
 1. An integrated circuit (IC), comprising: asemiconductor substrate having a top surface and a bottom surface; andat least one metal-oxide-semiconductor field effect transistor (MOSFET)cell formed in the semiconductor substrate, the MOSFET cell comprising apair of MOSFET devices coupled to each other at a common drain contact,wherein at least one MOSFET device includes a source contact (SCT)trench extended into a substrate contact region in the semiconductorsubstrate proximate to the bottom surface, the SCT trench having alength along the top surface less than a linear portion of a polysilicongate of the at least one MOSFET device, the SCT trench aligned to acomplementary contour of the polysilicon gate having a curvilinearlayout geometry.
 2. The IC as recited in claim 1, further comprising anarray of MOSFET cells, wherein a peripheral cell of the array comprisesa peripheral MOSFET device and an inactive circuit portion formed in thesemiconductor substrate.
 3. The IC as recited in claim 2, wherein theperipheral MOSFET device includes a second polysilicon gate having asecond length along the top surface, and the second length shorter thanthe length of the polysilicon gate of the at least one MOSFET device. 4.The IC as recited in claim 2, wherein the peripheral MOSFET deviceincludes a second polysilicon gate having a second length along the topsurface, and the second length same as the length of the polysilicongate of the at least one MOSFET device.
 5. The IC as recited in claim 2,further comprising a ground tab coupled to a field plate of theperipheral MOSFET device.
 6. The IC as recited in claim 5, wherein thefield plate comprises at least one refractory metal material layerformed of a material selected from the group of titanium, titaniumnitride (Ti/TiN), tungsten and Ti-tungsten (Ti—W).
 7. The IC as recitedin claim 1, wherein the SCT trench has an aspect ratio of at least 2:1.8. The IC as recited in claim 1, wherein the SCT trench is filled with ametallic plug comprising a refractory metal or platinum-group metal(PGM) filler for forming an electrical contact with a source terminal ofthe at least one MOSFET device.
 9. A laterally diffusedmetal-oxide-semiconductor transistor (LDMOS) device, comprising: asemiconductor substrate having a top surface and a bottom surface, thesemiconductor substrate having a doped layer positioned adjacent to thetop surface and having an upper surface; source and drain regions of afirst conductivity type positioned in the doped layer proximate theupper surface of the doped layer, the source and drain regions beingspaced from one another and separated by a channel region of a secondconductivity type formed in the doped layer, the channel region having aportion extending under the source region, wherein the drain regioncomprises a lightly doped drain (LDD) region formed adjacent to thechannel region; a doped drain contact region spaced from the channelregion by the lightly doped drain region; a conductive gate having anupper surface and sidewall surfaces, the conductive gate formed over agate dielectric layer formed over the channel region, the conductivegate at least partially overlapping the source and drain regions; aconductive path connecting the source region and the semiconductorsubstrate via a conductor disposed in a source contact (SCT) trenchformed in the doped layer and extended into a substrate contact regionin the semiconductor substrate, the SCT trench having a length along thetop surface less than a linear portion of the conductive gate, the SCTtrench aligned to a complementary contour of the conductive gate havinga curvilinear geometry; a first insulating layer over the upper surfaceand sidewall surfaces of the conductive gate; a field plate layered overthe lightly doped drain region and at least a portion of the firstinsulating layer, wherein the field plate is connected to the sourceregion; a second insulating layer over the layer of field plate, thefirst insulating layer and the trench; and a drain electrodeelectrically coupled to the drain contact region.
 10. The LDMOS deviceas recited in claim 9, wherein the SCT trench has an aspect ratio of atleast 2:1.
 11. The LDMOS device as recited in claim 9, wherein the fieldplate comprises at least one refractory metal material layer formed of amaterial selected from the group of titanium, titanium nitride (Ti/TiN),tungsten and Ti-tungsten (Ti—W).
 12. The LDMOS device as recited inclaim 9, wherein the SCT trench is filled with a metallic plug formingthe conductor comprising a refractory metal or platinum-group metal(PGM) filler.
 13. A method of fabricating a powermetal-oxide-semiconductor field effect transistor (MOSFET) integratedcircuit, the method comprising: providing a semiconductor substratehaving a top surface and a bottom surface; forming a doped layeradjacent to the top surface of the semiconductor surface and having anupper surface; forming source and drain regions of a first conductivitytype positioned in the doped layer proximate the upper surface of thedoped layer, the source and drain regions being spaced from one anotherand separated by a channel region of a second conductivity type formedin the doped layer, the channel region having a portion extending underthe source region, wherein the drain region comprises a lightly dopeddrain (LDD) region formed adjacent to the channel region; forming adoped drain contact region spaced from the channel region by the lightlydoped drain region; forming a conductive gate having an upper surfaceand sidewall surfaces, the conductive gate formed over a gate dielectriclayer formed over the channel region, the conductive gate at leastpartially overlapping the source and drain regions; forming a conductivepath connecting the source region and the semiconductor substrate via aconductor disposed in a source contact (SCT) trench formed in the dopedlayer and extended into a substrate contact region in the semiconductorsubstrate, the SCT trench having a length along the top surface lessthan a linear portion of the conductive gate, the SCT trench aligned toa complementary contour of the conductive gate having a curvilineargeometry; forming a first insulating layer over the upper surface andsidewall surfaces of the conductive gate; forming a field plate layerover the lightly doped drain region, wherein the field plate layer isconnected to the source region; forming a second insulating layer overthe layer of field plate and the first insulating layer and the trench;and forming a drain electrode electrically coupled to the drain contactregion.
 14. The method as recited in claim 13, wherein the SCT trenchhas an aspect ratio of at least 2:1.
 15. The method as recited in claim13, wherein the field plate layer comprises at least one refractorymetal material layer formed of a material selected from the group oftitanium, titanium nitride (Ti/TiN), tungsten and Ti-tungsten (Ti—W).16. The method as recited in claim 9, wherein the SCT trench is filledwith a metallic plug forming the conductor comprising a refractory metalor platinum-group metal (PGM) filler.